邵国胜教授——郑大材料科学与工程学院研究生导师

郑大考研网

姓    名：邵国胜
性    别：男
出生年月：1958年07月
籍    贯：河南省郏县
最高学历：博    士
从事专业：材料科学与工程
职    务：
职    称：特聘教授
社会兼职：英材料学会专业会员/环太硅基半导体会议国际顾问
联系方式：E-mail：gsshao@zzu.edu.cn
通讯地址：郑州市科学大道100号
个人简历：
1. 1992.9–1995.4   毕业于英国University of Surrey 材料科学与工程专业，获博士学位。
2. 1995.9–1999.4   University of Surrey 材料科学与工程，博士后。
3. 1999.4–2005.4   University of Surrey 材料科学与工程，研究员。
4. 2005.5–2007.2   Brunel University工学院，副教授。
5. 2007.2–         University of Bolton工程院，教授、院长、新能源研究所所长
6. 2010.11-         入选“千人计划”国家特聘教授，加盟郑州大学，组建郑州大学低碳及环境材料研究所和中英纳米多功能材料研究中心。
教学情况：
硕士、博士研究生相关课程
研究领域：
1. 新一代低成本高效益天阳能电池的研发
2. 多尺度材料模拟与智能材料及器件的设计
3. 金属氧化物半导体光电磁一体化
4. 新型能源与环境材料
学术贡献：
(1)多尺度智能材料设计方法：自上而下的研究战略与自下而上的研究方法相结合，以多尺度理论模拟为指导，从事材料的分子设计及性能预测。 主要贡献包括：
(a)建立非晶相形成理论并首次预见及成功制备无定形金属硅化物半导体(J. Appl.Phys.88  (2000)  4443-4445;J.  Appl.  Phys.90 (2001) 724-727;Appl.Phys. Lett.79 (2001) 1438-1440等）。该类半导体被日本学者纳入最有发展前景的“环境半导体”。有望成为新型低成本高性能太阳能电池的核心材料。
(b)首次成功实现宽能带氧化物半导体的能带改造（自紫外至红外的吸收边超红移使之适用于新型低成本高性能太阳能电池及可见光区自清洁材料。
(c)金属间化合物国防结构材料设计及相变过程，首次建立钛基金属间化合物中相变的预报方法。
(2) 首 次 建 立 了 长 程 周 期 性 超 结 构 的 电 子 衍 射 理 论 (Appl.Phys. Lett.74(1999)2643-2645；Intermetallics 10 (2002) 493 – 496等)。该理论亦适用于无公度长程有序结构。建立了应用高能 X 射线光电子能谱（XPS）研究合金化电子过程的方法（Phys. Rev. B 71: 075114 (2005)等）。
(3）硅化物及硅基光电(伏)材料及器件处于国际光电研究前沿： 硅化物相图计算，新型硅化物半导体设计及制备， 硅化物半导体电子晶体学， 硅发光技术。 首创硅基发光器。发表于 Nature（410 (2001) 192-194; 414(2001) 470）的工作导致国际硅基发光研究热（SCI年均他引30余次）。
部分结项及在研项目如下：
项目类别
编号
项目名称
起止年月
资助金额
参与情况
进 展
重点

英工程与物理基金：硅化物合金化
2001-2004
329479镑
材料技术负责人
已完成
重点

英工程与物理基金：硅基发光器
2002-2005
446111镑
材料技术负责人
已完成
重点

英国防部：国防材料智能设计
2005-2007
60832镑
技术咨询
已完成
一般

英焦耳中心：氧化物半导体能带计算
2007-2009
35071镑
项目负责人
已完成
重点

Leverhulme Trust：低成本ZnO生物传感器
2008-2012
97186镑
材料技术负责人
在研
重点

英战略技术基金：低成本高效率长寿命太阳能电池
2008-2010
933050镑
项目负责人
已完成
一般

英焦耳中心：自组合TiO2纳米线太阳能电池
2009–2010
49420镑
项目负责人
已完成
英国皇家学会、理物休摩基金
F/01431/C
SAW based digital microflu
idics using low-cost elect
rochemical ZnO
2009-2012
938000镑
项目负责人
在研
NSFC
面上
11174256
超薄Si/FeSi2/Si太阳能电池的界面、缺陷与光伏转换效率的关联
2012-2015
60万元
项目负责人
在研
国核集团

新一代核能核心材料及技术
2012-2016
100万元
项目负责人
在研


研究梯队：
每年招收研究生2~3人，博士1~2名。团队以留学归国青年博士为主体。
个人兴趣：
旅游、摄影
主要荣誉：
1. 英材料化学委员会委员生
2. 英材料学会专业会员
3. 英工程及物理基金评委
4. 美自然科学基金海外评委
5. 环太硅基半导体会议国际顾问
6. 英材料学会可持续材料研讨会筹委等
7. 国家自然科学基金委第十四届专家
成果清单：
1、发表论文（自2000年来）
Q. Deng, X. Han, Y. Gao and G. Shao. "Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2." Journal of Applied Physics 2012; 112(1): 013523-013528.
M. Guo, X. Xia, Y. Gao, G. Jiang, Q. Deng and G. Shao. "Self-aligned TiO2 thin films with remarkable hydrogen sensing functionality." Sensors and Actuators B: Chemical 2012; 12(3): 23-28.
X. Han and G. Shao. "Origin of n-type conductivity of Sn-doped Mg 2Si from first principles." Journal of Applied Physics 2012; 112(1): 715-720.
X. Han and G. Shao. "Electronic Properties of Rutile TiO2 with Nonmetal Dopants from First Principles." The Journal of Physical Chemistry C 2011.
M. Milosavljevic, L. Wong, M. Lourenço, R. Valizadeh, J. Colligon, G. Shao and K. Homewood. "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films." Japanese Journal of Applied Physics 2010; 49(8): 1401-1405.
G. Shao. "By molecular design." Materials World 2010; 18(12): 20-22.
Y. Shao, S. Zhang, M.H. Engelhard, G. Li, G. Shao, Y. Wang, J. Liu, I.A. Aksay and Y. Lin. "Nitrogen-doped graphene and its electrochemical applications." J. Mater. Chem. 2010; 20(35): 7491-7496.
G. Shao. "Red shift in manganese-and iron-doped TiO2: a DFT+ U analysis." The Journal of Physical Chemistry C 2009; 113(16): 6800-6808.
Y Gao, G Shao, RS Chen, YT Chong, Quan Li. “TEM study of self-assembled FeSi2 nanostructures by ion beam implantation”, Solid State Communications, 2009; 149(3-4): 97-100.
G. Shao, M. Chen, W. Wang and G. Zhang. "The effect of salinity pretreatment on Cd accumulation and Cd-induced stress in BADH-transgenic and nontransgenic rice seedlings." Journal of Plant Growth Regulation 2008; 27(3): 205-210.
G Shao, “Electronic structures of manganese-doped rutile TiO2 from first principles”, Journal of Physical Chemistry C  2008; 112(47): 18677-18685.
G Shao, “Melting of metallic and intermetallic solids: an energetic view from DFT calculated potential wells”, Computational Materials Science 2008; 43: 1141–1146.
M Milosavljevi?, M A Lourenço, G Shao, R M Gwilliam, K P Homewood. “Formation of dislocation loops in silicon by ion irradiation – for silicon light emitting diodes”, Nuclear Instruments and Methods in Physics Research B 2008; 266(10), 2470-2474.
L. Wong, M. Milosavljevic, M.A. Lourenco, G. Shao, R. Valizadeh, J.S. Colligon and K.P. Homewood. “Annealing and deposition temperature dependence of the bandgap of amorphous FeSi2 fabricated by co-sputter deposition”, Semiconductor Science and Technology 2008; 23(3): 35- 40.
J.B. Patel, Y.Q. Liu, G. Shao and Z. Fan, “Rheo-processing of an alloy specifically designed for semi-solid metal processing based on the Al-Mg-Si system”, Materials Science and Engineering: A 2008; 476(1-2), 341-349.
Y. Gao, S.P. Wong, Q. Li, K. H. Cheng, N. Ke, W.H. Cheung, G. Shao,  “Origin of ferromagnetism in Co ion implanted anatase TiO2 thin films”, Japanese Journal of Applied Physics 2007; 46( 9A): 5767-5770.
Y. Gao, G. Shao, Q. Li, Y.M. Xu, S.P. Wong, M.Y. Zhou, H. Wang, M. Lourenco, K.P. Homewood.  “Microstructure and optical properties of semiconducting MnSi1.7 synthesised by ion beam implantation”. Japanese Journal of Applied Physics 2007; 46( 9A): 5777-5779.
M.A. Lourenco, M. Milosavljevic, G. Shao, R.M. Gwilliam and K.P. Homewood, “Dislocation engineered silicon light emitting devices”, Thin Solid Films 2007, 515, (22), 8113-8117.
20. X. Fang, G. Shao, Y.Q. Liu, Z. Fan, “Effects of intensive forced melt convection on the mechanical properties of Fe-containing Al-Si based alloys”, Materials Science and Engineering A 2007, 445-446: 65-72.
J. Geng, P. Tsakiropoulos and G. Shao. "A study of the effects of Hf and Sn additions on the microstructure of Nb< sub> ss</sub>/Nb< sub> 5</sub> Si< sub> 3</sub> based in situ composites." Intermetallics 2007; 15(1): 69-76.
J. Geng, P. Tsakiropoulos and G. Shao. "A thermo-gravimetric and microstructural study of the oxidation of Nb< sub> ss</sub>/Nb< sub> 5</sub> Si< sub> 3</sub>-based< i> in situ</i> composites with Sn addition." Intermetallics 2007; 15(3): 270-281.
J. Geng, P. Tsakiropoulos, G. Shao, “Oxidation of Nb-Si-Cr-Al in situ composites with Mo, Ti and Hf additions”, Materials Science and Engineering A, 2006; 441(1-2): 26 - 38.
X. Fang, G. Shao, Z. Fan, “Microstructure and mechanical properties of Fe-containing Al-alloys processed by a rheo-diecasting process”, Materials Science Forum, 2006; 519/521: 1251-1257.
G. Shao, V. Varsani, Z Fan. “Thermodynamic modelling of the Y-Zn and Mg-Zn-Y systems”, CALPHAD - Computer Coupling of Phase Diagrams and Thermochemistry, 2006, 30(3): 286-295.
M. Milosavljevi?, G. Shao, M. A. Lourenço, R.M. Gwilliam, K.P. Homewood. “Optimising dislocation-engineered silicon light emission diodes”, Journal of Physics B 2006; DOI: 10.1007/s00340-006-2149-6.
M.A. Lourenço, M. Milosavljevi?, G. Shao, R.M. Gwilliam and K.P. Homewood, “Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes”, Thin Solid Films 2006; 504: 596-602.
J. Geng, G. Shao, P. Tsakiropoulos, “Study of three-phase equilibrium in the Nb-rich corner of Nb-Si-Cr system”, Intermetallics 2006; 14(7): 832-837.
G. Shao, V. Varsani, Y. Wang, Ma Qian, Z. Fan.  “On the solidification microstructure of Mg-30Zn-2.5Y metal-intermetallic alloy”, Intermetallics, 2006; 14(6): 596-602.
M. Milosavljevi?, G. Shao, M. A. Lourenço, R.M. Gwilliam, and K.P. Homewood, S.P. Edwards, R. Valizadeh,  J.S. Colligon. “Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature”, Journal of Applied Physics, 2005;98: Art. No. 123506.
M.A. Lourenço, M. Milosavljevic, R. Gwilliam, K.P. Homewood and G. Shao. “On the role of dislocation loops to silicon light emitting diodes”, Applied Physics Letters, 2005; 87(20), Art. No. 201105;.
J Geng, P Tsakiropoulos and G Shao, “The effects of Ti and Mo additions on the microstructure of Nb-silicide based in situ composites”, Intermetallics  2006; 14(3): 227-235.
R. Gwilliam, M.A. Lourenço, M. Milosavljevic, K.P. Homewood and G. Shao. “Dislocation engineering for Si-based light emitting diodes”, Materials Science and Engineering  2005; B124-125: 86-92.
N.H. Peng, C. Jeynes, R.M. Gwilliam, K.J. Kirkby, R.P. Webb, G. Shao, D.A. Astill, W.Y. Liang. “A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation”, IEEE Transactions on Applied Superconductivity 2005; 15 (2): 3265-3268 .
Lourenco MA, Milosavljevic M, Galata S, Siddiqui MSA, Shao G, Gwilliam RM, Homewood KP “Silicon-based light emitting devices”, 2005; 78 (2-4): 551-556.
G Shao, “Prediction of structural stabilities of transition-metal disilicide alloys by the density functional theory”, Acta Materialia, 2005; 53: 3729-3736.
M. Milosavljevi?, G. Shao, M. A. Lourenço, R.M. Gwilliam, and K.P. Homewood, “Engineering of boron induced dislocation loops for efficient room temperature silicon LEDs”, Journal of Applied Physics, 2005; 97 (7): art. no. 073512.
DA Pankhurst, Z Yuan, D Nguyen-Manh, ML Abel, G Shao, JF Watts, DG Pettifor, P Tsakiropoulos, “Electronic structure and bonding in MoSi3, Mo5Si3 and Mo(Si,Al)2 alloys investigated by X-ray photoelectron spectroscopy and density functional theory”, Physical Review 2005; B71: 075114.
G Shao, B Lu, YQ Liu and P Tsakiropoulos, “Glass forming ability of multi-component metallic systems”, Intermetallics, 2005; 13(3): 409-414.
G Shao, “Thermodynamic characterisation of the Cr-Nb-Si system”, Intermetallics 2005; 13(1): 69-78.
M. Milosavljevi?, G. Shao, R.M. Gwilliam, Y. Gao, M.A. Lourenco, K.P. Homewood, R. Valizadeh, J.S. Colligon, “Synthesis of semiconducting amorphous FeSi2 layers by co-sputter deposition”, Thin Solid Films, 2004;  461 (1): 72-76.
Lourenco MA, M. Milosavljevi?, Gwilliam RM, Shao G, and Homewood KP, “Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices”, Thin Solid Films, 2004; 461 (1): 219-222.
G. Shao and P. Tsakiropoulos, “The roles of thermodynamics and transformation kinetics on phase selections in the non-equilibrium processing of materials”, Materials Science and Engineering A, 2004; 375/377: 556-560.
P. Tsakiropoulos and G. Shao, “Phase selection in non-equilibrium processed TM-Al intermetallic alloys”, Materials Science and Engineering A, 2004; 375/377: 201-206.
G. Shao, “Thermodynamic assessment of the Nb-Si-Al system”, Intermetallics, 2004; 12(6): 655-664.
Lourenco MA, Siddiqui MSA, Shao G, Gwilliam RM, Homewood KP, “Ion beam fabricated silicon light-emitting diodes”, Physica Status Solidi A-Applied Research  2004; 201 (2): 239-244.
G Shao. Thermodynamic and kinetic aspects of intermetallic amorphous alloys. Intermetallics. 2003; 11(4): 313-324.
G. Shao. Diffraction from long-period out-of-phase superstructures. Intermetallics. 2002; 10 (5): 493 – 496.
Y.Q. Liu, G. Shao*, P. Tsakiropoulos. Thermodynamic reassessment of the Mo-Si and Al-Mo-Si systems. Intermetallics. 2001; 9 (2): 125-136.
Wai Lek Ng, M.A. Lourenco, R.M. Gwilliam, S. Ledain, G. Shao, K.P. Homewood. An effective room temperature silicon-based light-emitting diode. Nature  2001; 410: 192-194.
M. Milosavljevic, G. Shao, H. Bibic, C.N. McKinty and K.P. Homewood. Amorphous iron disilicide: a promising semiconductor. Applied Physics Letter 2001; 79 (10):1438- 1440.
YQ. Liu, G. Shao*, K.P. Homewood. Prediction of amorphous phase stability in the metal-silicon systems. Journal of Applied Physics 2001; 90 (8):724-727.
G Shao. Prediction of amorphous phase stability in metallic alloys. Journal of Applied Physics 2000; 88 (7): 4443- 4445.
G. Shao, P. Tsakiropoulos. On the omega phase formation in Cr-Al and Ti-Al-Cr alloys. Acta Materialia. 2000; 48(14): 3671- 3685.
G. Shao*, K.P. Homewood. On the crystallographic characteristics of ion beam synthesised b-FeSi2. Intermetallics. 2000; 8(12):1405- 1412.
G Shao*, S Ledain, YL Chen, JS Sharpe, RM Gwilliam, KP Homewood, K Reeson Kirkby，MJ Goringe. On the crystallographic characteristics of ion beam synthesised Ru2Si3 precipitates. Applied Physics Letters. 2000;76: 2529-31.
Y.Q. Liu, G. Shao*, P. Tsakiropoulos. On the oxidation behaviour of MoSi2. Intermetallics. 2000;8(8):953- 962.
2、申请专利
1. Continuous  ZnO  film  with  embedded ZnO nano-arrays  英国GB0907550.8
2. Oxide photovoltaic cell  英国GB0823441.1
3. Energy band coupled photovoltaic cell  英国 GB2451.188A
4. Method  for  locally  modifying electronic  and  photo-electronic properties  of  crystalline  materials  and devices made from such materials国际(英、美、日、中、欧等) PCT/GB2001/002512
5. Fabrication  of  MgB2  superconductor thin films and electronic devices by ion implantation国际(英、美、日、中、欧等)PCT/GB 2003/004948
6. Thin  film  photovoltaic  cells  with semiconductor silicides  英国  GB101699.6.